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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Silicon/Oxide/Silicon Carbide (SiOSiC) - A New...

Silicon/Oxide/Silicon Carbide (SiOSiC) - A New Approach to High-Voltage, High-Frequency Integrated Circuits

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1255-1258

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1255

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Online since:

April 2002

Authors:

F. Udrea, Andrej Mihaila, R. Azar

Keywords:

High Frequency Ics, High-Voltage Ics, Power Integrated Circuits, Silicon Carbide (SiC), SOI

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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