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A Comparative Study of the Electrical Properties of 4H-SiC Epilayers with Continuous and Dissociated Micropipes
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Analysis of High Leakage Currents in 4H-SiC...

Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1141-1144

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1141

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Online since:

April 2002

Authors:

Takashi Tsuji, Syunsuke Izumi, A. Ueda, Hiroyuki Fujisawa, Katsunori Ueno, Hidekazu Tsuchida, Isaho Kamata, Tamotsu Jikimoto, Kunikaza Izumi

Keywords:

Annealing Temperature, Leakage Current, OBIC, TEM

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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