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Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs
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A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H₂ and H₂O Vapor Atmosphere Post-Oxidation Annealing
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Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing
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4H-SiC MOSFETs on (03-38) Face
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Improved Channel Mobility in Normally-Off 4H-SiC MOSFETs with Buried Channel Structure
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Significant Improvement of Inversion Channel...

Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1061-1064

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1061

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Online since:

April 2002

Authors:

Junji Senzaki, Kenji Fukuda, Kazutoshi Kojima, Shinsuke Harada, Ryouji Kosugi, Seiji Suzuki, Takaya Suzuki, Kazuo Arai

Keywords:

4H-SiC (11-20) Plane, Buried Channel, Hydrogen Post-Oxidation Annealing, Inversion Channel Mobility, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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