Correlation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETs

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

1045-1048

Citation:

S. Suzuki et al., "Correlation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETs", Materials Science Forum, Vols. 389-393, pp. 1045-1048, 2002

Online since:

April 2002

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$38.00

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