Paper Titles

SIMS Analyses of SiO₂/4H-SiC(0001) Interface
p.1037

Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs
p.1041

Correlation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETs
p.1045

Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETs
p.1049

Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs
p.1053

A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H₂ and H₂O Vapor Atmosphere Post-Oxidation Annealing
p.1057

Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing
p.1061

4H-SiC MOSFETs on (03-38) Face
p.1065

Improved Channel Mobility in Normally-Off 4H-SiC MOSFETs with Buried Channel Structure
p.1069

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Influence of the Crystalline Quality of Epitaxial...

Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1053-1056

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1053

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Online since:

April 2002

Authors:

Kazutoshi Kojima, Toshiyuki Ohno, Seiji Suzuki, Junji Senzaki, Shinsuke Harada, Kenji Fukuda, Mitsuhiro Kushibe, Koh Masahara, Yuuki Ishida, Sadafumi Yoshida, Tetsuo Takahashi, Takaya Suzuki, Tomoyuki Tanaka, Kazuo Arai

Keywords:

4H-SiC, Crystal Quality, Epitaxial Layer, Inversion Channel Mobility, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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