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Paper Titles
On Shallow Interface States in n-Type 4H-SiC Metal-Oxide-Semiconductor Structures
p.1005
Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures
p.1009
The Investigation of 4H-SiC/SiO2 Interfaces by Optical and Electrical Measurements
p.1013
Characteristics of Mobile Ions in the SiO2 Films of SiC-MOS Structures
p.1017
Abnormal Hysteresis Property of SiC Oxide C-V Characteristics
p.1021
ESR Characterization of SiC Bulk Crystals and SiO2/SiC Interface
p.1025
Characterization of the Interfaces between SiC and Oxide Films by Spectroscopic Ellipsometry
p.1029
X-Ray Photoelectron Spectroscopy Studies of Post-Oxidation Process Effects on Oxide/SiC Interfaces
p.1033
SIMS Analyses of SiO2/4H-SiC(0001) Interface
p.1037

Abnormal Hysteresis Property of SiC Oxide C-V Characteristics

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1021-1024

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1021

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Online since:

April 2002

Authors:

Jae Seung Choi, Weon Seon Lee, Dong Hyun Shin, Hyung Gyoo Lee, Yeong Seuk Kim, Keun Hyung Park

Keywords:

6H-SiC, C-V Characteristics, Gate Oxide, Hysteresis, Trap-Assisted FN Tunneling

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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