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Improvement of SiO2/α-SiC Interface Properties by Nitrogen Radical Treatment

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

997-1000

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.997

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Online since:

April 2002

Authors:

Yusuke Maeyama, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki, T. Shirafuji

Keywords:

MOS, Nitrogen Radical, Oxygen Radical, SiO2/SiC Interface

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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