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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393High-Current, NO-Annealed Lateral 4H-SiC MOSFETs

High-Current, NO-Annealed Lateral 4H-SiC MOSFETs

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

981-984

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.981

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Online since:

April 2002

Authors:

Mrinal K. Das, G.Y. Chung, John R. Williams, N.S. Saks, Lori A. Lipkin, John W. Palmour

Keywords:

4H-SiC, Channel Mobility, Hall-Effect, Interface States (or Traps), Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), MOS, NO

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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