Reduction of Interface Trap Density in 4H-SiC MOS by High-Temperature Oxidation

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

989-992

DOI:

10.4028/www.scientific.net/MSF.389-393.989

Citation:

E. Okuno and S. Amano, "Reduction of Interface Trap Density in 4H-SiC MOS by High-Temperature Oxidation", Materials Science Forum, Vols. 389-393, pp. 989-992, 2002

Online since:

April 2002

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