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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393N2O Processing Improves the 4H-SiC:SiO2 Interface

N₂O Processing Improves the 4H-SiC:SiO₂ Interface

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

985-988

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.985

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Online since:

April 2002

Authors:

Lori A. Lipkin, Mrinal K. Das, John W. Palmour

Keywords:

Interface States (or Traps), Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Mobility, MOS, N₂O, Oxidation

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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