N2O Processing Improves the 4H-SiC:SiO2 Interface

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

985-988

DOI:

10.4028/www.scientific.net/MSF.389-393.985

Citation:

L. A. Lipkin et al., "N2O Processing Improves the 4H-SiC:SiO2 Interface", Materials Science Forum, Vols. 389-393, pp. 985-988, 2002

Online since:

April 2002

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$35.00

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