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Electrical Properties of 4H-SiC Thin Films Reactively Ion-Etched in SF₆/O₂ Plasma
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Photoelectrochemical Etching Process of 6H-SiC...

Photoelectrochemical Etching Process of 6H-SiC Wafers Using HF-Based Solution and H₂O₂ Solution as Electrolytes

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

957-960

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.957

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Online since:

April 2002

Authors:

Jung Gyun Song, Moo Whan Shin

Keywords:

Etching Rate, Photoelectrochemical (PEC) Etching, Surface Roughness (SR)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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