Paper Titles

Schottky Barriers for Pt on 6H- and 4H-SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission
p.921

Electrical Properties and Interface Reaction of Annealed Cu/4H-SiC Schottky Rectifiers
p.925

Effect of Temperature Treatment on Au/Pd Schottky Contacts to 4H-SiC
p.929

Characteristics of Schottky Diodes on 6H-SiC Surfaces after Sacrificial Anodic Oxidation
p.933

Reduction of the Barrier Height and Enhancement of Tunneling Current of Titanium Contacts Using Embedded Au Nano-Particles on 4H and 6H Silicon Carbide
p.937

Some Comparative Properties of Diffusion-Welded Contacts to 6H and 4H Silicon Carbide
p.941

Electrical Properties of Graphite/p-Type Homoepitaxial Diamond Contact
p.945

Reactive Ion Etching Process of 4H-SiC Using the CHF₃/O₂ Mixtures and a Post-O₂ Plasma-Etching Process
p.949

Electrical Properties of 4H-SiC Thin Films Reactively Ion-Etched in SF₆/O₂ Plasma
p.953

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Reduction of the Barrier Height and Enhancement of...

Reduction of the Barrier Height and Enhancement of Tunneling Current of Titanium Contacts Using Embedded Au Nano-Particles on 4H and 6H Silicon Carbide

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

937-940

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.937

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Online since:

April 2002

Authors:

Sang Kwon Lee, Carl Mikael Zetterling, Mikael Östling, I. Fusegawa, M.H. Magnusson, K. Deppert, L.-E. Wernersson, L. Samuelson, A. Litwin

Keywords:

Aerosol, Image Force Lowering, Nanoparticle, Ohmic Contact, Schottky Contact, Silicon Carbide (SiC)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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