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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393

Materials Science Forum Vols. 389-393

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393

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Paper Title Page

Masking Process for High-Energy and High-Temperature Ion Implantation

Authors: Takasumi Ohyanagi, Hidekatsu Onose, Atsuo Watanabe, Tomoyuki Someya, Toshiyuki Ohno, Kensuke Amemiya, Yutaka Kobayashi

867

Laser Crystallization Mechanism of Amorphous SiC Thin Films

Authors: S. Urban, Fritz Falk, T. Gorelik, Ute Kaiser

871

Experimental and Computer Simulation Studies of Defects and Ion-Solid Interactions in Silicon Carbide

Authors: William J. Weber, Fei Gao, Weilin Jiang, Ram Devanathan

875

Ohmic Contact Structure and Fabrication Process Applicable to Practical SiC Devices

Authors: Satoshi Tanimoto, Norihiko Kiritani, Masakatsu Hoshi, Hideyo Okushi

879

CoAl Ohmic Contact Materials with Improved Surface Morphology for p-Type 4H-SiC

Authors: Osamu Nakatsuka, Yasuo Koide, Masanori Murakami

885

NiSi₂ Ohmic Contact to n-Type 4H-SiC

Authors: Tomonori Nakamura, Masataka Satoh

889

Electrical Characterization of Nickel Silicide Contacts on Silicon Carbide

Authors: Fabrizio Roccaforte, Francesco La Via, Vito Raineri, Paolo Musumeci, Lucia Calcagno

893

Effects of Interfacial Reactions on Electrical Properties of Ni Ohmic Contacts on n-Type 4H-SiC

Authors: Sang Youn Han, Nam Kyun Kim, Eun Dong Kim, Jong Lam Lee

897

Influence of Rapid Thermal Annealing on Ni/6H-SiC Contact Formation

Authors: Oleg A. Agueev, Alexander M. Svetlichnyi, Roman N. Razgonov

901

Effect of Rapid Thermal Annealing Conditions on Parameters of Ni/21R-SiC Contacts

Authors: V.L. Litvinov, K.D. Demakov, Oleg A. Agueev, Alexander M. Svetlichnyi, Raisa V. Konakova, Petr M. Lytvyn, Victor V. Milenin

905