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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393

Materials Science Forum Vols. 389-393

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393

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Paper Title Page

Modification of SiC Properties by Insertion of Ge and Si Nanocrystals - Description by ab initio Supercell Calculations

Authors: Hans-Christian Weissker, J. Furthmüller, Friedhelm Bechstedt

743

Growth and Characterization of Three-Dimensional SiC Nanostructures on Si

Authors: Volker Cimalla, Konstantinos Zekentes

747

Hole Resonant Tunneling through SiC/Si-dot/SiC Heterostructures

Authors: Yoshifumi Ikoma, K. Uchiyama, Fumio Watanabe, Teruaki Motooka

751

Development of a Multilayer SiC Surface Micromachining Process with Capabilities and Design Rules Comparable to Conventional Polysilicon Surface Micromachining

Authors: Xiao Yan Song, Srihari Rajgopal, J.M. Melzak, Christian A. Zorman, Mehran Mehregany

755

Influence of Deposition Parameters and Temperature on Stress and Strain of In Situ Doped PECVD Silicon Carbide

Authors: Hoa Thi Mai Pham, Charles R. de Boer, Lukasz Pakula, Pasqualina M. Sarro

759

Thermoelectric Properties of 3C-SiC Produced by Silicon Carbonization

Authors: Makoto Masuda, Hiroshi Mabuchi, H. Tsuda, T. Matsui, K. Morii

763

The Brittle-to-Ductile Transition in 4H-SiC

Authors: M. Zhang, H. McD. Hobgood, Jean Luc Demenet, P. Pirouz

767

Annealing of Implanted Layers in (1-100) and (11-20) Oriented SiC

Authors: Masataka Satoh

773

Range Distributions of Implanted Ions in Silicon Carbide

Authors: Martin S. Janson, Margareta K. Linnarsson, Anders Hallén, Bengt Gunnar Svensson

779

Phosphorus Ion Implantation into 4H-SiC (0001) and (11-20)

Authors: Yuki Negoro, Nao Miyamoto, Tsunenobu Kimoto, Hiroyuki Matsunami

783