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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393

Materials Science Forum Vols. 389-393

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393

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Paper Title Page

Characterization of 4H-SiC Band-Edge Absorption Properties by Free-Carrier Absorption Technique with a Variable Excitation Spectrum

Authors: Paulius Grivickas, Vytautas Grivickas, Augustinas Galeckas, Jan Linnros

617

Spatial Mapping of the Carrier Concentration and Mobility in SiC Wafers by Micro Fourier-Transform Infrared Spectroscopy

Authors: Hiroyuki Yaguchi, K. Narita, Yasuto Hijikata, Sadafumi Yoshida, Shinichi Nakashima, Naoki Oyanagi

621

Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy

Authors: B. Herzog, S. Rohmfeld, Roland Püsche, Martin Hundhausen, Lothar Ley, Kurt Semmelroth, Gerhard Pensl

625

Sensitive Detection of Defects in α and β SiC by Raman Scattering

Authors: Shinichi Nakashima, Yasuhiro Nakatake, Yuuki Ishida, Tetsuo Takahashi, Hajime Okumura

629

Raman Microprobe Study of Carrier Density Profiles in Modulation-Doped 6H SiC

Authors: Shinichi Nakashima, Yasuhiro Nakatake, Y. Yano, Hiroshi Harima, Noboru Ohtani, Masakazu Katsuno

633

A Raman Study of Metal-SiC Interface Reactions

Authors: Eiji Kurimoto, Hiroshi Harima, Tadao Toda, Minoru Sawada, Shinichi Nakashima, Motohiro Iwami

637

Ultrafast Electron Relaxation Processes in SiC

Authors: Takuro Tomita, S. Saito, T. Suemoto, Hiroshi Harima, Shinichi Nakashima

641

Optical Characterization of Ion-Implanted 4H-SiC

Authors: Zhe Chuan Feng, Feng Yan, W.Y. Chang, Jian Hui Zhao, Jian Yi Lin

647

Breakdown Fields along Various Crystal Orientations in 4H-, 6H- and 3C-SiC

Authors: Shun-ichi Nakamura, Hironori Kumagai, Tsunenobu Kimoto, Hiroyuki Matsunami

651

Quantitative High-Resolution Two-Dimensional Profiling of SiC by Scanning Capacitance Microscopy

Authors: Vito Raineri, Filippo Giannazzo, Lucia Calcagno, Paolo Musumeci, Fabrizio Roccaforte, Francesco La Via

655