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Mapping of the Luminescence Decay of Lightly-Doped n-4H-SiC at Room-Temperature
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Photoluminescence Investigation of Hydrogen Interaction with Defects in SiC
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Photoconductivity of Lightly-Doped and Semi-Insulating 4H-SiC and the Free Exciton Binding Energy
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Characterization of 4H-SiC Band-Edge Absorption Properties by Free-Carrier Absorption Technique with a Variable Excitation Spectrum
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Spatial Mapping of the Carrier Concentration and Mobility in SiC Wafers by Micro Fourier-Transform Infrared Spectroscopy
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Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy
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Sensitive Detection of Defects in α and β SiC by Raman Scattering
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Raman Microprobe Study of Carrier Density Profiles in Modulation-Doped 6H SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Characterization of 4H-SiC Band-Edge Absorption...

Characterization of 4H-SiC Band-Edge Absorption Properties by Free-Carrier Absorption Technique with a Variable Excitation Spectrum

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

617-620

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.617

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Online since:

April 2002

Authors:

Paulius Grivickas, Vytautas Grivickas, Augustinas Galeckas, Jan Linnros

Keywords:

Band-to-Band Absorption, Phonons, Thermal Band-Gap Narrowing

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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