Paper Titles

Mapping of the Luminescence Decay of Lightly-Doped n-4H-SiC at Room-Temperature
p.605

Photoluminescence Investigation of Hydrogen Interaction with Defects in SiC
p.609

Photoconductivity of Lightly-Doped and Semi-Insulating 4H-SiC and the Free Exciton Binding Energy
p.613

Characterization of 4H-SiC Band-Edge Absorption Properties by Free-Carrier Absorption Technique with a Variable Excitation Spectrum
p.617

Spatial Mapping of the Carrier Concentration and Mobility in SiC Wafers by Micro Fourier-Transform Infrared Spectroscopy
p.621

Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy
p.625

Sensitive Detection of Defects in α and β SiC by Raman Scattering
p.629

Raman Microprobe Study of Carrier Density Profiles in Modulation-Doped 6H SiC
p.633

A Raman Study of Metal-SiC Interface Reactions
p.637

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Spatial Mapping of the Carrier Concentration and...

Spatial Mapping of the Carrier Concentration and Mobility in SiC Wafers by Micro Fourier-Transform Infrared Spectroscopy

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2001

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

621-624

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.621

Citation:

Cite this paper

Online since:

April 2002

Authors:

Hiroyuki Yaguchi, K. Narita, Yasuto Hijikata, Sadafumi Yoshida, Shinichi Nakashima, Naoki Oyanagi

Keywords:

4H-SiC, 6H-SiC, Carrier Concentration, Fourier Transform Infrared Spectroscopy (FTIR), Mapping, Mobility, Reflectance

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: