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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Sensitive Detection of Defects in α and β SiC by...

Sensitive Detection of Defects in α and β SiC by Raman Scattering

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

629-632

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.629

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Online since:

April 2002

Authors:

Shinichi Nakashima, Yasuhiro Nakatake, Yuuki Ishida, Tetsuo Takahashi, Hajime Okumura

Keywords:

Defect, LO Phonon Plasmon Coupled Mode, Raman Scattering, TO Bands

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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