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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Photoconductivity of Lightly-Doped and...

Photoconductivity of Lightly-Doped and Semi-Insulating 4H-SiC and the Free Exciton Binding Energy

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

613-616

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.613

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Online since:

April 2002

Authors:

Ivan G. Ivanov, Jie Zhang, L. Storasta, Erik Janzén

Keywords:

Electronic Band-Gap, Exciton Binding Energy, Excitonic Band-Gap, Extrinsic Photocurrent, Intrinsic Photocurrent

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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