Photoconductivity of Lightly-Doped and Semi-Insulating 4H-SiC and the Free Exciton Binding Energy

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

613-616

DOI:

10.4028/www.scientific.net/MSF.389-393.613

Citation:

I. G. Ivanov et al., "Photoconductivity of Lightly-Doped and Semi-Insulating 4H-SiC and the Free Exciton Binding Energy", Materials Science Forum, Vols. 389-393, pp. 613-616, 2002

Online since:

April 2002

Export:

Price:

$35.00

In order to see related information, you need to Login.