Spectra Associated with Stacking Faults in 4H-SiC Grown in a Hot-Wall CVD Reactor
p.589
p.589
Characterization of Bulk and Epitaxial SiC Material Using Photoluminescence Spectroscopy
p.593
p.593
Characterization of SiC Epitaxial Wafers by Photoluminescence under Deep UV Excitation
p.597
p.597
UV Scanning Photoluminescence Spectroscopy Investigation of 6H- and 4H-SiC
p.601
p.601
Mapping of the Luminescence Decay of Lightly-Doped n-4H-SiC at Room-Temperature
p.605
p.605
Photoluminescence Investigation of Hydrogen Interaction with Defects in SiC
p.609
p.609
Photoconductivity of Lightly-Doped and Semi-Insulating 4H-SiC and the Free Exciton Binding Energy
p.613
p.613
Characterization of 4H-SiC Band-Edge Absorption Properties by Free-Carrier Absorption Technique with a Variable Excitation Spectrum
p.617
p.617
Spatial Mapping of the Carrier Concentration and Mobility in SiC Wafers by Micro Fourier-Transform Infrared Spectroscopy
p.621
p.621
Mapping of the Luminescence Decay of Lightly-Doped n-4H-SiC at Room-Temperature
Abstract:
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Periodical:
Materials Science Forum (Volumes 389-393)
Pages:
605-608
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Online since:
April 2002
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© 2002 Trans Tech Publications Ltd. All Rights Reserved
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