Paper Titles

Characterization of 4H-SiC Band-Edge Absorption Properties by Free-Carrier Absorption Technique with a Variable Excitation Spectrum
p.617

Spatial Mapping of the Carrier Concentration and Mobility in SiC Wafers by Micro Fourier-Transform Infrared Spectroscopy
p.621

Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy
p.625

Sensitive Detection of Defects in α and β SiC by Raman Scattering
p.629

Raman Microprobe Study of Carrier Density Profiles in Modulation-Doped 6H SiC
p.633

A Raman Study of Metal-SiC Interface Reactions
p.637

Ultrafast Electron Relaxation Processes in SiC
p.641

Optical Characterization of Ion-Implanted 4H-SiC
p.647

Breakdown Fields along Various Crystal Orientations in 4H-, 6H- and 3C-SiC
p.651

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Raman Microprobe Study of Carrier Density Profiles...

Raman Microprobe Study of Carrier Density Profiles in Modulation-Doped 6H SiC

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2001

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

633-636

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.633

Citation:

Cite this paper

Online since:

April 2002

Authors:

Shinichi Nakashima, Yasuhiro Nakatake, Y. Yano, Hiroshi Harima, Noboru Ohtani, Masakazu Katsuno

Keywords:

Carrier Concentration, LO Phonon Plasmon Coupled Mode, Mobility, Raman Imaging

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: