Paper Titles

Raman Microprobe Study of Carrier Density Profiles in Modulation-Doped 6H SiC
p.633

A Raman Study of Metal-SiC Interface Reactions
p.637

Ultrafast Electron Relaxation Processes in SiC
p.641

Optical Characterization of Ion-Implanted 4H-SiC
p.647

Breakdown Fields along Various Crystal Orientations in 4H-, 6H- and 3C-SiC
p.651

Quantitative High-Resolution Two-Dimensional Profiling of SiC by Scanning Capacitance Microscopy
p.655

Scanning Capacitance Microscopy of SiC Multiple PN Junction Structure Grown by Cold-Wall Chemical Vapor Deposition
p.659

Carrier Concentrations in Implanted and Epitaxial 4H-SiC by Scanning Spreading Resistance Microscopy
p.663

Nanoscale Electrical Characterization of 3C-SiC Layers by Conductive Atomic Force Microscopy
p.667

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Breakdown Fields along Various Crystal...

Breakdown Fields along Various Crystal Orientations in 4H-, 6H- and 3C-SiC

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2001

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

651-654

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.651

Citation:

Cite this paper

Online since:

April 2002

Authors:

Shun-ichi Nakamura, Hironori Kumagai, Tsunenobu Kimoto, Hiroyuki Matsunami

Keywords:

(03-38) Plane, (11-20) Plane, Anisotropy, Breakdown Field

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: