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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Quantitative High-Resolution Two-Dimensional...

Quantitative High-Resolution Two-Dimensional Profiling of SiC by Scanning Capacitance Microscopy

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

655-658

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.655

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Online since:

April 2002

Authors:

Vito Raineri, Filippo Giannazzo, Lucia Calcagno, Paolo Musumeci, Fabrizio Roccaforte, Francesco La Via

Keywords:

Carrier Profiling, Dopant Activation, Ion Implantation, Scanning Capacitance Microscopy

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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