Quantitative High-Resolution Two-Dimensional Profiling of SiC by Scanning Capacitance Microscopy

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

655-658

DOI:

10.4028/www.scientific.net/MSF.389-393.655

Citation:

V. Raineri et al., "Quantitative High-Resolution Two-Dimensional Profiling of SiC by Scanning Capacitance Microscopy", Materials Science Forum, Vols. 389-393, pp. 655-658, 2002

Online since:

April 2002

Export:

Price:

$35.00

In order to see related information, you need to Login.