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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Carrier Concentrations in Implanted and Epitaxial...

Carrier Concentrations in Implanted and Epitaxial 4H-SiC by Scanning Spreading Resistance Microscopy

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

663-666

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.663

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Online since:

April 2002

Authors:

John Österman, Srinivasan Anand, Margareta K. Linnarsson, Anders Hallén

Keywords:

Dopant Activation, Implantation Profile, Point Contact, Spreading Resistance, SSRM

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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