Paper Titles

Carrier Concentrations in Implanted and Epitaxial 4H-SiC by Scanning Spreading Resistance Microscopy
p.663

Nanoscale Electrical Characterization of 3C-SiC Layers by Conductive Atomic Force Microscopy
p.667

Point-Contact Current Voltage Technique for Depth Profiling of Dopants in Silicon Carbide
p.671

Optical and Electrical Characterization of Free-Standing 3C-SiC Films Grown on Undulant 6in Si Substrates
p.675

Influence of Excited States of Deep Acceptors on Hole Concentrations in SiC
p.679

p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization
p.683

Scanning Acoustic Microscopy in Porous SiC
p.687

Atomic-Scale Passivation of Silicon Carbide Surfaces
p.691

Adsorption of Metastable Molecular Oxygen on SiC(0001)-√3 x √3
p.697

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Influence of Excited States of Deep Acceptors on...

Influence of Excited States of Deep Acceptors on Hole Concentrations in SiC

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2001

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

679-682

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.679

Citation:

Cite this paper

Online since:

April 2002

Authors:

Hideharu Matsuura

Keywords:

Acceptor Level, Excited State, FCCS, Hall-Effect Measurement, p-Type SiC, Temperature Dependence of Hole Concentration

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: