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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393

Materials Science Forum Vols. 389-393

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393

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Paper Title Page

EPR Study of Single Silicon Vacancy-Related Defects in 4H- and 6H-SiC

Authors: Norikazu Mizuochi, Junichi Isoya, Satoshi Yamasaki, H. Takizawa, Norio Morishita, Takeshi Ohshima, Hisayoshi Itoh

497

The Neutral Silicon Vacancy in SiC: Ligand Hyperfine Interaction

Authors: Matthias Wagner, N.Q. Thinh, Nguyen Tien Son, P.G. Baranov, E.N. Mokhov, Christer Hallin, W.M. Chen, Erik Janzén

501

Properties of the UD-1 Deep-Level Center in 4H-SiC

Authors: Björn Magnusson, Alexsandre Ellison, Erik Janzén

505

Electronic Structure of the UD3 Defect in 4H- and 6H-SiC

Authors: Matthias Wagner, Björn Magnusson, W.M. Chen, Erik Janzén

509

Depth Distribution of Lattice Damage-Related D_I and D_II Defects after Ion Implantation and Annealing of 6H-SiC

Authors: Yaroslav Koshka, Galyna Melnychuck

513

Electrical Properties of Neutron-Irradiated Silicon Carbide

Authors: S. Kanazawa, M. Okada, J. Ishii, T. Nozaki, K. Shin, S. Ishihara, I. Kimura

517

Radiation-Induced Defects in p-Type Silicon Carbide

Authors: S. Kanazawa, M. Okada, T. Nozaki, K. Shin, S. Ishihara, I. Kimura

521

Hole and Electron Effective Masses in 6H-SiC Studied by Optically Detected Cyclotron Resonance

Authors: Nguyen Tien Son, Christer Hallin, Erik Janzén

525

Electronic Localization around Stacking Faults in Silicon Carbide

Authors: Hisaomi Iwata, Ulf Lindefelt, Sven Öberg, Patrick R. Briddon

529

Theoretical Study of Cubic Polytype Inclusions in 4H-SiC

Authors: Hisaomi Iwata, Ulf Lindefelt, Sven Öberg, Patrick R. Briddon

533