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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393

Materials Science Forum Vols. 389-393

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393

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Paper Title Page

4H-SiC ACCUFET with a Two-Layer Stacked Gate Oxide

Authors: Saichirou Kaneko, Hideaki Tanaka, Yoshio Shimoida, Norihiko Kiritani, Satoshi Tanimoto, Mitsugu Yamanaka, Masakatsu Hoshi

1073

4H-SiC Delta-Doped Accumulation-Channel MOS FET

Authors: Toshiya Yokogawa, Kunimasa Takahashi, Osamu Kusumoto, Masao Uchida, Kenya Yamashita, Makoto Kitabatake

1077

Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface

Authors: Tetsuo Hatakeyama, Shinsuke Harada, Seiji Suzuki, Junji Senzaki, Ryouji Kosugi, Kenji Fukuda, Takashi Shinohe, Kazuo Arai

1081

TCAD Optimisation of 4H-SiC Channel-Doped MOSFET with P-Polysilicon Gate

Authors: Kazuhiro Adachi, C. Mark Johnson, Kazuo Arai, Kenji Fukuda, Shinsuke Harada, Takashi Shinohe

1085

Hysteresis in Transfer Characteristics in 4H-SiC Depletion/Accumulation-Mode MOSFETs

Authors: K. Chatty, S. Banerjee, T. Paul Chow, Ronald J. Gutmann

1089

Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide

Authors: Takeshi Ohshima, Kin Kiong Lee, Akihiko Ohi, Masahito Yoshikawa, Hisayoshi Itoh

1093

Radiation Response of p-Channel 6H-SiC MOSFETs Fabricated Using Pyrogenic Conditions

Authors: Kin Kiong Lee, Takeshi Ohshima, Hisayoshi Itoh

1097

Surface Morphology and Chemistry of 4H- and 6H-SiC after Cyclic Oxidation

Authors: Robert S. Okojie, Dorothy Lukco, Luann Keys, Sergey P. Tumakha, Leonard J. Brillson

1101

Plasma Oxidation of SiC at Low Temperatures (below 300°C)

Authors: Masataka Satoh, Hisanori Shimada, Tomonori Nakamura, Naoshi Nagamoto, Sachiko Yanagihara

1105

Low-Temperature Thermal Oxidation of Ion-Amorphized 6H-SiC

Authors: Roberta Nipoti, Andrea Parisini, Antonella Poggi

1109