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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393

Materials Science Forum Vols. 389-393

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393

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Table of Contents

Paper Title Page

High-Voltage Pulse Instabilities in SiC Schottky Diodes with Implanted Resistive Edge Terminations

Authors: D.T. Morisette, James A. Cooper

1157

Development of 600 V/ 8 A SiC Schottky Diodes with Epitaxial Edge Termination

Authors: Francois Templier, Pierre Ferret, Lea Di Cioccio, Emmanuel Collard, André Lhorte, Thierry Billon

1161

Minimization of Electric Field Enhancement at Electrode Edge by Surface High Resistive Layer in Ti/4H-SiC Schottky Barrier Diode

Authors: Kenichi Ohtsuka, Hiroshi Sugimoto, Shin Ichi Kinouchi, Yoichiro Tarui, Masayuki Imaizumi, Tetsuya Takami, Tatsuo Ozeki

1165

Reverse Characteristics of a 4H-SiC Schottky Barrier Diode

Authors: Tetsuo Hatakeyama, Takashi Shinohe

1169

Power Schottky and p-n Diodes on SiC Epi-Wafers with Reduced Micropipe Density

Authors: Alexander Syrkin, Vladimir Dmitriev, Rositza Yakimova, Anne Henry, Erik Janzén

1173

4H-SiC MPS Diode Fabrication and Characterization in an Inductively Loaded Half-Bridge Inverter up to 100 kW

Authors: Peter Alexandrov, B. Wright, M. Pan, M. Weiner, Leonid Fursin, Jian Hui Zhao

1177

Performance of SiC Bipolar (PiN) and Unipolar (SBD) Power Rectifiers in Current-Voltage-Frequency Parameter Space

Authors: D.T. Morisette, James A. Cooper

1181

Application-Oriented Unipolar Switching SiC Devices

Authors: Peter Friedrichs, Heinz Mitlehner, Reinhold Schörner, Karl Otto Dohnke, Rudolf Elpelt, Dietrich Stephani

1185

High-Performance UMOSFETs in 4H-SiC

Authors: Y. Li, James A. Cooper, Michael A. Capano

1191

Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC

Authors: Sei Hyung Ryu, Anant K. Agarwal, Jim Richmond, Mrinal K. Das, Lori A. Lipkin, John W. Palmour, N.S. Saks, John R. Williams

1195