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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393

Materials Science Forum Vols. 389-393

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393

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Paper Title Page

Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power Switches

Authors: Andrej Mihaila, F. Udrea, R. Azar, Gheorghe Brezeanu, G. Amaratunga

1239

Simulation Study of a Novel Current-Limiting Device: A Vertical α-SiC JFET - Controlled Current Limiter

Authors: Dominique Tournier, Philippe Godignon, Dominique Planson, Jean-Pierre Chante, F. Sarrus

1243

Realization of a High-Current and Low R_ON 600V Current-Limiting Device

Authors: F. Nallet, Philippe Godignon, Dominique Planson, Christophe Raynaud, Jean-Pierre Chante

1247

Super-Junction Device Forward Characteristics and Switched Power Limitations

Authors: Kazuhiro Adachi, C. Mark Johnson, Hiromichi Ohashi, Takashi Shinohe, Kozo Kinoshita, Kazuo Arai

1251

Silicon/Oxide/Silicon Carbide (SiOSiC) - A New Approach to High-Voltage, High-Frequency Integrated Circuits

Authors: F. Udrea, Andrej Mihaila, R. Azar

1255

High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects

Authors: H. Lendenmann, Fanny Dahlquist, Peder Bergman, H. Bleichner, Christer Hallin

1259

High-Temperature Performance of 10 Kilovolts, 200 Amperes (Pulsed) 4H-SiC PiN Rectifiers

Authors: Ranbir Singh, Kenneth G. Irvine, Jim Richmond, John W. Palmour

1265

Study of SiC PiN Diodes Subjected to High Current Density Pulses

Authors: Leonardo M. Hillkirk, Mietek Bakowski

1269

High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion Implantation

Authors: Yuki Negoro, Nao Miyamoto, Tsunenobu Kimoto, Hiroyuki Matsunami

1273

Measurement and Device Simulation of Avalanche Breakdown in High-Voltage 4H-SiC Diodes Including the Influence of Macroscopic Defects

Authors: Martin Domeij, H. Brünahl, Mikael Östling

1277