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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393

Materials Science Forum Vols. 389-393

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393

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Paper Title Page

Influence of Semi-Insulating Substrate Purity on the Output Characteristics of 4H-SiC MESFETs

Authors: N. Sghaier, Jean Marie Bluet, A. Souifi, Gérard Guillot, Erwan Morvan, Christian Brylinski

1363

Development and Demonstration of High-Power X-Band SiC MESFETs

Authors: H.R. Chang, E. Hanna, J. Hacker, R. Hackett, C. Bui

1367

Hot-Carrier Luminescence in 4H-SiC MESFETs

Authors: C. Banc, Edwige Bano, Thierry Ouisse, Olivier Noblanc, Christian Brylinski

1371

High-Performance Silicon Carbide MESFET Utilizing Lateral Epitaxy

Authors: Andrey O. Konstantinov, Chris I. Harris, Per Ericsson

1375

Influence of Gate Finger Width on RF Characteristics of 4H-SiC MESFET

Authors: Manabu Arai, Hirotake Honda, Makoto Ogata, Hiroshi Sawazaki, Shuichi Ono

1379

Fabrication of 4H-SiC Planar MESFETs Having Low Contact Resistance

Authors: Hoon Joo Na, Hyeong Joon Kim, Kazuhiro Adachi, Norihiko Kiritani, Satoshi Tanimoto, Hideyo Okushi, Kazuo Arai

1383

Surface Control of 4H-SiC MESFETs

Authors: Keith P. Hilton, Michael J. Uren, D.G. Hayes, H.K. Johnson, P.J. Wilding

1387

Characteristics of MESFETs Made by Ion-Implantation in Bulk Semi-Insulating 4H-SiC

Authors: S. Mitra, Jesse B. Tucker, Mulpuri V. Rao, N. Papanicolaou, Kenneth A. Jones

1391

Evaluation of SiC MESFET Structures Using Large-Signal Time-Domain Simulations

Authors: Rolf Jonsson, Joakim Eriksson, Qamar-ul Wahab, Staffan Rudner, Niklas Rorsman, Herbert Zirath, C. Svensson

1395

4H-SiC MESFET Large-Signal Modeling Using Modified Materka Model

Authors: Soo Woong Lee, Nam Jin Song, Jinwook Burm, Chul An

1399