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High-Performance Silicon Carbide MESFET Utilizing Lateral Epitaxy
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Hot-Carrier Luminescence in 4H-SiC MESFETs

Hot-Carrier Luminescence in 4H-SiC MESFETs

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1371-1374

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1371

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Online since:

April 2002

Authors:

C. Banc, Edwige Bano, Thierry Ouisse, Olivier Noblanc, Christian Brylinski

Keywords:

Hot Carriers, Impact Ionization, Luminescence, MESFET, Photon Emission

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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