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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Influence of Semi-Insulating Substrate Purity on...

Influence of Semi-Insulating Substrate Purity on the Output Characteristics of 4H-SiC MESFETs

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1363-1366

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1363

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Online since:

April 2002

Authors:

N. Sghaier, Jean Marie Bluet, A. Souifi, Gérard Guillot, Erwan Morvan, Christian Brylinski

Keywords:

HTCVD, MESFET, Trapping

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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