Influence of Semi-Insulating Substrate Purity on the Output Characteristics of 4H-SiC MESFETs

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

1363-1366

DOI:

10.4028/www.scientific.net/MSF.389-393.1363

Citation:

N. Sghaier et al., "Influence of Semi-Insulating Substrate Purity on the Output Characteristics of 4H-SiC MESFETs", Materials Science Forum, Vols. 389-393, pp. 1363-1366, 2002

Online since:

April 2002

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