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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Development and Demonstration of High-Power X-Band...

Development and Demonstration of High-Power X-Band SiC MESFETs

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1367-1370

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1367

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Online since:

April 2002

Authors:

H.R. Chang, E. Hanna, J. Hacker, R. Hackett, C. Bui

Keywords:

f_max, f_t, MESFET, Power Amplifier, RF Transistor, Silicon Carbide (SiC)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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