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Hybrid MOS-Gated Bipolar Transistor Using 4H-SiC BJT
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A Novel, Planar 3,000 V Normally-Off Field Gated Bipolar Transistor in 4H-SiC
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Dynamic Performance of 3.1 kV 4H-SiC Asymmetrical GTO Thyristors
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4H-SiC IMPATT Diode Fabrication and Testing
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Demonstration of IMPATT Diode Oscillators in 4H-SiC
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Influence of Semi-Insulating Substrate Purity on the Output Characteristics of 4H-SiC MESFETs
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Development and Demonstration of High-Power X-Band SiC MESFETs
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Dynamic Performance of 3.1 kV 4H-SiC Asymmetrical...

Dynamic Performance of 3.1 kV 4H-SiC Asymmetrical GTO Thyristors

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1349-1352

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1349

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Online since:

April 2002

Authors:

Anant K. Agarwal, Pavel A. Ivanov, Michael E. Levinshtein, John W. Palmour, Sergey L. Rumyantsev

Keywords:

GTO, High-Temperature, Switch, Thyristor, Turn-Off Gain

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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