On the Temperature Coefficient of 4H-SiC npn Transistor Current Gain

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

1333-1336

DOI:

10.4028/www.scientific.net/MSF.389-393.1333

Citation:

L. X. Li et al., "On the Temperature Coefficient of 4H-SiC npn Transistor Current Gain", Materials Science Forum, Vols. 389-393, pp. 1333-1336, 2002

Online since:

April 2002

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$35.00

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