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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Investigation of Thermal Properties in Fabricated...

Investigation of Thermal Properties in Fabricated 4H-SiC High-Power Bipolar Transistors

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1337-1340

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1337

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Online since:

April 2002

Authors:

Erik Danielsson, Carl Mikael Zetterling, Mikael Östling, Urban Forsberg, Erik Janzén

Keywords:

Bipolar Transistors, Breakdown Voltage, Thermal Conductivity (TC)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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