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Highly-Doped Implanted pn Junction for SiC Zener Diode Fabrication
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Unipolar and Bipolar SiC Integral Cascoded Switches with MOS and Junction Gate - Simulation Study
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All-SiC Inductively-Loaded Half-Bridge Inverter Characterization of 4H-SiC Power BJTs up to 400V/22 A
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Improvement and Analysis of Implanted-Emitter Bipolar Junction Transistors in 4H-SiC
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On the Temperature Coefficient of 4H-SiC npn Transistor Current Gain
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Investigation of Thermal Properties in Fabricated 4H-SiC High-Power Bipolar Transistors
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Hybrid MOS-Gated Bipolar Transistor Using 4H-SiC BJT
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393All-SiC Inductively-Loaded Half-Bridge Inverter...

All-SiC Inductively-Loaded Half-Bridge Inverter Characterization of 4H-SiC Power BJTs up to 400V/22 A

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1325-1328

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1325

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Online since:

April 2002

Authors:

Yan Bin Luo, Leonid Fursin, Jian Hui Zhao, Peter Alexandrov, B. Wright, M. Weiner

Keywords:

Fabrication, Half-Bridge Inverter, Power Transistor, Silicon Carbide (SiC)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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