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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Highly-Doped Implanted pn Junction for SiC Zener...

Highly-Doped Implanted pn Junction for SiC Zener Diode Fabrication

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1317-1320

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1317

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Online since:

April 2002

Authors:

Philippe Godignon, Xavier Jordá, Roberta Nipoti, G.C. Cardinali, Narcis Mestres

Keywords:

High Energy-Implantation, P-N Junction, Silicon Carbide (SiC), Zener Diode

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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