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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Electrical Characteristics of 4H-SiC pn Diode...

Electrical Characteristics of 4H-SiC pn Diode Grown by LPE Method

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1313-1316

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1313

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Online since:

April 2002

Authors:

N.I. Kuznetsov, D. Bauman, A. Gavrilin, Evgenia V. Kalinina

Keywords:

Electrical Characteristics, Liquid Phase Epitaxy (LPE), P-N Junction, Silicon Carbide (SiC)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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