Electrical Characteristics of 4H-SiC pn Diode Grown by LPE Method
p.1313
p.1313
Highly-Doped Implanted pn Junction for SiC Zener Diode Fabrication
p.1317
p.1317
Unipolar and Bipolar SiC Integral Cascoded Switches with MOS and Junction Gate - Simulation Study
p.1321
p.1321
All-SiC Inductively-Loaded Half-Bridge Inverter Characterization of 4H-SiC Power BJTs up to 400V/22 A
p.1325
p.1325
Improvement and Analysis of Implanted-Emitter Bipolar Junction Transistors in 4H-SiC
p.1329
p.1329
On the Temperature Coefficient of 4H-SiC npn Transistor Current Gain
p.1333
p.1333
Investigation of Thermal Properties in Fabricated 4H-SiC High-Power Bipolar Transistors
p.1337
p.1337
Hybrid MOS-Gated Bipolar Transistor Using 4H-SiC BJT
p.1341
p.1341
A Novel, Planar 3,000 V Normally-Off Field Gated Bipolar Transistor in 4H-SiC
p.1345
p.1345
Improvement and Analysis of Implanted-Emitter Bipolar Junction Transistors in 4H-SiC
Abstract:
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Periodical:
Materials Science Forum (Volumes 389-393)
Pages:
1329-1332
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Online since:
April 2002
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© 2002 Trans Tech Publications Ltd. All Rights Reserved
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