A Novel, Planar 3,000 V Normally-Off Field Gated Bipolar Transistor in 4H-SiC

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

1345-1348

DOI:

10.4028/www.scientific.net/MSF.389-393.1345

Citation:

L. X. Li et al., "A Novel, Planar 3,000 V Normally-Off Field Gated Bipolar Transistor in 4H-SiC", Materials Science Forum, Vols. 389-393, pp. 1345-1348, 2002

Online since:

April 2002

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$35.00

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