Paper Titles

Improvement and Analysis of Implanted-Emitter Bipolar Junction Transistors in 4H-SiC
p.1329

On the Temperature Coefficient of 4H-SiC npn Transistor Current Gain
p.1333

Investigation of Thermal Properties in Fabricated 4H-SiC High-Power Bipolar Transistors
p.1337

Hybrid MOS-Gated Bipolar Transistor Using 4H-SiC BJT
p.1341

A Novel, Planar 3,000 V Normally-Off Field Gated Bipolar Transistor in 4H-SiC
p.1345

Dynamic Performance of 3.1 kV 4H-SiC Asymmetrical GTO Thyristors
p.1349

4H-SiC IMPATT Diode Fabrication and Testing
p.1353

Demonstration of IMPATT Diode Oscillators in 4H-SiC
p.1359

Influence of Semi-Insulating Substrate Purity on the Output Characteristics of 4H-SiC MESFETs
p.1363

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393A Novel, Planar 3,000 V Normally-Off Field Gated...

A Novel, Planar 3,000 V Normally-Off Field Gated Bipolar Transistor in 4H-SiC

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2001

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1345-1348

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1345

Citation:

Cite this paper

Online since:

April 2002

Authors:

Larry X. Li, Leonid Fursin, Jian Hui Zhao, Peter Alexandrov, M. Pan, M. Weiner, Terry Burke, G. Khalil

Keywords:

Bipolar Transistors, High Voltage (HV), Normally-Off, Numerical Simulation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: