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Paper Titles
Demonstration of IMPATT Diode Oscillators in 4H-SiC
p.1359
Influence of Semi-Insulating Substrate Purity on the Output Characteristics of 4H-SiC MESFETs
p.1363
Development and Demonstration of High-Power X-Band SiC MESFETs
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Hot-Carrier Luminescence in 4H-SiC MESFETs
p.1371
High-Performance Silicon Carbide MESFET Utilizing Lateral Epitaxy
p.1375
Influence of Gate Finger Width on RF Characteristics of 4H-SiC MESFET
p.1379
Fabrication of 4H-SiC Planar MESFETs Having Low Contact Resistance
p.1383
Surface Control of 4H-SiC MESFETs
p.1387
Characteristics of MESFETs Made by Ion-Implantation in Bulk Semi-Insulating 4H-SiC
p.1391

High-Performance Silicon Carbide MESFET Utilizing Lateral Epitaxy

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1375-1378

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1375

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Online since:

April 2002

Authors:

Andrey O. Konstantinov, Chris I. Harris, Per Ericsson

Keywords:

MESFET, Micro-Wave

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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