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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Characteristics of MESFETs Made by...

Characteristics of MESFETs Made by Ion-Implantation in Bulk Semi-Insulating 4H-SiC

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1391-1394

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1391

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Online since:

April 2002

Authors:

S. Mitra, Jesse B. Tucker, Mulpuri V. Rao, N. Papanicolaou, Kenneth A. Jones

Keywords:

Annealing, DLTS, Ion Implantation, MESFET, Silicon Carbide (SiC)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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