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Characteristics of MESFETs Made by Ion-Implantation in Bulk Semi-Insulating 4H-SiC
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Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Evaluation of SiC MESFET Structures Using...

Evaluation of SiC MESFET Structures Using Large-Signal Time-Domain Simulations

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1395-1398

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1395

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Online since:

April 2002

Authors:

Rolf Jonsson, Joakim Eriksson, Qamar-ul Wahab, Staffan Rudner, Niklas Rorsman, Herbert Zirath, C. Svensson

Keywords:

Large-Signal, MESFET, Micro-Wave, Power, Simulation, Time-Domain

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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