The Development of Ultra-High Frequency Power 6H-SiC Vertical Static Induction Transistor with p-n Junction as a Gate

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

1407-1410

DOI:

10.4028/www.scientific.net/MSF.389-393.1407

Citation:

V. I. Sankin et al., "The Development of Ultra-High Frequency Power 6H-SiC Vertical Static Induction Transistor with p-n Junction as a Gate", Materials Science Forum, Vols. 389-393, pp. 1407-1410, 2002

Online since:

April 2002

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