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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393The Development of Ultra-High Frequency Power...

The Development of Ultra-High Frequency Power 6H-SiC Vertical Static Induction Transistor with p-n Junction as a Gate

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1407-1410

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1407

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Online since:

April 2002

Authors:

Vladimir Ilich Sankin, Pavel P. Shkrebiy, Alexey N. Kuznetsov, N.S. Savkina

Keywords:

Bragg Reflection, Electric Field, FET, Field-Induced Localisation, Miniband, Natural Superlattice, Negative Differential Conduction, Power Microwave Device, Silicon Carbide (SiC), SIT

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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