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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393The Effect of Hydrogen Diffusion in p- and n-Type...

The Effect of Hydrogen Diffusion in p- and n-Type SiC Schottky Diodes at High Temperatures

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1419-1422

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1419

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Online since:

April 2002

Authors:

Lars Unéus, Shinji Nakagomi, Margareta K. Linnarsson, Martin S. Janson, Bengt Gunnar Svensson, Rositza Yakimova, Mikael Syväjärvi, Anne Henry, Erik Janzén, Lars-G. Ekedahl, Ingemar Lundström, Anita Lloyd Spetz

Keywords:

Annealing, Gas Sensor, High-Temperature, Hydrogen Diffusion, Schottky Diode

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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