The Effect of Hydrogen Diffusion in p- and n-Type SiC Schottky Diodes at High Temperatures

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

1419-1422

DOI:

10.4028/www.scientific.net/MSF.389-393.1419

Citation:

L. Unéus et al., "The Effect of Hydrogen Diffusion in p- and n-Type SiC Schottky Diodes at High Temperatures", Materials Science Forum, Vols. 389-393, pp. 1419-1422, 2002

Online since:

April 2002

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