Paper Titles

Surface Control of 4H-SiC MESFETs
p.1387

Characteristics of MESFETs Made by Ion-Implantation in Bulk Semi-Insulating 4H-SiC
p.1391

Evaluation of SiC MESFET Structures Using Large-Signal Time-Domain Simulations
p.1395

4H-SiC MESFET Large-Signal Modeling Using Modified Materka Model
p.1399

Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET
p.1403

The Development of Ultra-High Frequency Power 6H-SiC Vertical Static Induction Transistor with p-n Junction as a Gate
p.1407

Silicon Carbide Microwave Limiters
p.1411

MISiCFET Chemical Gas Sensors for High Temperature and Corrosive Environment Applications
p.1415

The Effect of Hydrogen Diffusion in p- and n-Type SiC Schottky Diodes at High Temperatures
p.1419

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Compatibility of VJFET Technology with MESFET...

Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2001

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1403-1406

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1403

Citation:

Cite this paper

Online since:

April 2002

Authors:

Dominique Tournier, Philippe Godignon, Josep Montserrat, Dominique Planson, Jean-Pierre Chante, F. Sarrus

Keywords:

MESFET, System Integration, Technology Compatibility, VJFET

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: