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Materials Science Forum Vols. 389-393

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393

ToC:

Table of Contents

Paper Title Page

Silicon Carbide Buffer Layers for Nitride Growth on Si
Authors: Pierre M. Masri, Z.G. Herro, Thomas Stauden, Joerg Pezoldt, M. Sumiya, M. Averous
1485
Crystallographic Growth Models of Wurtzite-Type Thin Films on 6H-SiC
Authors: Hitoshi Ohsato, Keiji Wada, Tomohisa Kato, C.J. Sun, M. Razeghi
1489
Photoluminescence and Electroluminescence Characterization of InxGa1-xN/InyGa1-yN Multiple Quantum Well Light Emitting Diodes
Authors: Peder Bergman, G.R. Pozina, Bo Monemar, Satoshi Kamiyama, Motoaki Iwaya, Hiroshi Amano, Isamu Akasaki
1493
Photoreflectance Characterization of GaNAs/GaAs Multiple Quantum Well Structures
Authors: Chien-Rong Lu, Jia Ren Lee, Yo-Yu Chen, Wei I Lee, Shih-Chang Lee
1497
Raman Scattering from Wurtzite GaN Bulk Crystal
Authors: Prabhat Verma, A. Yamada
1501
Recent Progress of AlGaN/GaN Heterojunction FETs for Microwave Power Applications
Authors: Hironobu Miyamoto
1505
High Performance AlGaN/GaN HEMTs with Recessed Gate
Authors: Y. Sano, J. Mita, T. Yamada, T. Makita, K. Kaifu, H. Ishikawa, Takashi Egawa, Takashi Jimbo
1511
Broadband Push-Pull Microwave Power Amplifier Using AlGaN/GaN HEMTs on SiC
Authors: Jong Wook Lee, Kevin J. Webb
1515
Temperature Dependence of DC Characteristics in AlN/GaN Metal Insulator Semiconductor Field Effect Transistor
Authors: Toshihide Ide, Mitsuaki Shimizu, Akira Suzuki, Xu-Qiang Shen, Hajime Okumura, Toshio Nemoto
1519
Thermal Analysis of GaN-Based HFET Devices Using the Unit Thermal Profile Approach
Authors: Jeong Park, Chin C. Lee, Jong Wook Kim, Jae Seung Lee, Won Sang Lee, Jin-Ho Shin, Moo Whan Shin
1523

Showing 361 to 370 of 373 Paper Titles

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