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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Temperature Dependence of DC Characteristics in...

Temperature Dependence of DC Characteristics in AlN/GaN Metal Insulator Semiconductor Field Effect Transistor

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1519-1522

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1519

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Online since:

April 2002

Authors:

Toshihide Ide, Mitsuaki Shimizu, Akira Suzuki, Xu-Qiang Shen, Hajime Okumura, Toshio Nemoto

Keywords:

AlN/GaN, Metal Insulator Semiconductor Field Effect Transistor, Temperature Dependence

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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