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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Thermal Analysis of GaN-Based HFET Devices Using...

Thermal Analysis of GaN-Based HFET Devices Using the Unit Thermal Profile Approach

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1523-1526

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1523

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Online since:

April 2002

Authors:

Jeong Park, Chin C. Lee, Jong Wook Kim, Jae Seung Lee, Won Sang Lee, Jin-Ho Shin, Moo Whan Shin

Keywords:

Gallium Nitride (GaN), HFET, Hot Spot, Liquid Crystal, Thermal Profile

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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